PART |
Description |
Maker |
RJK0851DPB-00-J5 RJK0851DPB-13 |
80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 180V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁| 6A条一c)|2 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五(巴西)总裁|甲一(c)| STR-5/16
|
Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
|
RJK0853DPB13 RJK0853DPB-00-J5 RJK0853DPB-15 |
80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching 80V, 40A, 8.0m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
2N4211 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | TO-210AE
|
|
RJK1052DPB-13 RJK1052DPB-00-J5 RJK1052DPB-15 |
100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching 100V, 20A, 20m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0854DPB-00-J5 |
80V, 25A, 13 m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
CDSV6-4448SD-G CDSV6-4448AD-G CDSV6-4448TI-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=100mA
|
Comchip Technology
|
CDSV3-217-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=300mA
|
Comchip Technology
|
2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
2SB920 2SB920L 2SD1236L |
80V/5A Switching Applications 80V/5A开关应
|
Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
|
164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 160V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 120伏特五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五(巴西)总裁|甲一(c)| STR-5/16
|
Ecliptek, Corp.
|
2SB596 2SB596O 2SB596Y |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 4A条一(c)| TO - 220AB现有 POWER TRANSISTORS(4.0A,80V,30W)
|
Mospec Semiconductor, Corp. MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|